Publikasjoner og ansvarsområder
Statistical analysis of structure loss in Czochralski silicon growth
Statistical Analysis of Structure Loss in Czochralski Silicon Growth
Structure Loss in Czochralski Silicon Growth: Statistical Analysis of Growth Parameters and Modeling of Thermal Fluctuations
Investigation of structure loss in industrial Czochralski silicon ingots: Effect of pores
Structure loss in Czochralski silicon ingots
Impact of thermal history on defects formation in the last solid fraction of Cz silicon ingots
Nonlinear model predictive control of the Czochralski Process
Commercially, the Czochralski process is the most commonly applied method for production of monocrystalline silicon for semiconductor and solar cell applications. The process has traditionally been controlled using nested single-loop controllers. Due to the complex and nonlinear nature of the Cz pro...
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Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon
Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e.g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A ...