Publikasjoner og ansvarsområder
Assessment of feature engineering and long short-term memory for structure loss identification from process data in monocrystalline silicon growth by the Czochralski method
Statistical Analysis of Structure Loss in Czochralski Silicon Growth
Structure Loss in Czochralski Silicon Growth: Statistical Analysis of Growth Parameters and Modeling of Thermal Fluctuations
Impact of thermal history on defects formation in the last solid fraction of Cz silicon ingots
Structure loss in Czochralski silicon ingots
Investigation of structure loss in industrial Czochralski silicon ingots: Effect of pores
Nonlinear model predictive control of the Czochralski Process
Commercially, the Czochralski process is the most commonly applied method for production of monocrystalline silicon for semiconductor and solar cell applications. The process has traditionally been controlled using nested single-loop controllers. Due to the complex and nonlinear nature of the Cz...
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Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon
Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e.g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A...