A low-power infrared source based on a silicon photonic-crystal membrane has been designed. Temperature distribution and reflection spectrum has been simulated. Large narrowband IR absorption is obtained with optimal material doping....

A low-power infrared source based on a silicon photonic-crystal membrane has been designed. Temperature distribution and reflection spectrum has been simulated. Large narrowband IR absorption is obtained with optimal material doping...

Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements....

Oxygen induced stacking faults (OSFs) are mainly seen in oxygen rich wafers from the seed end of Cz-silicon crystals. In wafers this ring shaped OSF-region delineates a border between two defect regions; usually silicon self-interstitials dominate outside and vacancies inside this ring. High tempera...