Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then annealed at 1400, 1500 and 1600 °C for 1h at each temperature. The buried...
- Forfattere
- Quanbao Ma
- Augustinas Galeckas
- Alexander Azarov
- Annett Thøgersen
- Patricia Almeida Carvalho
- Daniel Nilsen Wright
- Spyros Diplas
- Ole Martin Løvvik
- Valdas Jokubavicius
- Xinyu Liu
- Jianwu Sun
- Mikael Syväjärvi
- Bengt Gunnar Svensson
- År
- 2016
- Type
- Vitenskapelig artikkel