Amorphous indium-gallium-zinc-oxide (a-IGZO) based memristive devices with molybdenum contacts as both top and bottom electrodes are presented aiming to be used in neuromorphic applications. Devices down to µm are fabricated using conventional photolithography processes, with an extraor-dinary...
- Forfattere
- Maria Pereira
- J. Deuermeier
- Ricardo Nogueira
- Patricia Almeida Carvalho
- Rodrigo Martins
- Elvira Fortunato
- Asal Kiazadeh
- År
- 2020
- Type
- Vitenskapelig artikkel