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Characterization of B-implanted 3C-SiC for intermediate band solar cells

Characterization of B-implanted 3C-SiC for intermediate band solar cells

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Sammendrag
Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×1021 cm-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density. Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×1021 cm-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.
Oppdragsgiver
  • Norges forskningsråd / 229711
  • Norges forskningsråd / 510033
  • Norges forskningsråd / 197405
  • Norges forskningsråd / nn2615k
  • Norges forskningsråd / NN2615K
Språk
Engelsk
Forfatter(e)
Institusjon(er)
  • Universitetet i Oslo
  • Universitetet i Oslo
  • SINTEF Industri / Bærekraftig energiteknologi
  • SINTEF Digital / Smart Sensor Systems
  • Linköpings universitet
År
2017
Publisert i
Materials Science Forum
ISSN
0255-5476
Årgang
897
Side(r)
299 - 302