Publikasjoner og ansvarsområder
Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions
Impurity control in high performance multicrystalline silicon
Boron liquid solution deposited by spray method for p-type emitter formation in crystalline Si solar cells
This paper reports the fabrication of n-type crystalline Si based solar cell using boron liquid solution (BLS) deposited by spray method for p-type emitter formation. The X-ray photoelectron spectroscopy (XPS) was used for the analysis of surface composition and electronic states of elements at the ...
Development of bifunctional catalysts for Zn-air secondary batteries
Identification of defects causing performance degradation of high temperature n-type Czochralski silicon bifacial solar cells
Four industrial-scale n-type Czochralski silicon crystals were grown with different impurity contents, i.e. metallics, phosphorus and oxygen. Horizontal slices were obtained from the top and middle of the crystals and were characterized in terms of lifetime and both defect and impurity distribution....
Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops
To illuminate the role of crystal growth process on final oxygen precipitates during heat treatment of Cz-Si wafer, a coupled model, including the interaction of oxygen precipitates, point defects, and dislocation loops, has been used to test the influence of grown-in defects generated during crysta...
Zinc-Air Secondary batteries: Overall concept underpinning ZAS project
On the shape of n-type Czochralski silicon top ingots
Industrial scale n-type monocrystalline silicon ingots with different crown shape and shouldering area have been grown and characterized in terms of minority carrier lifetime, resistivity and concentration and distribution of interstitial oxygen (Oi), voids and thermal donors (TD). The properties ha...
Study of evolution of dislocation clusters in high performance multicrystalline silicon
The evolution of dislocation clusters in High Performance Multicrystalline Silicon was studied by means of photoluminescence imaging, defect etching and Electron Backscatter Diffraction. Cluster height was found to increase as function of lateral size. The largest clusters were found to exist in twi...