In this study n- and p-type polished Czochralski-grown Si (Cz-Si) and p-type polished and as-cut multi-crystalline (mc) Si wafers have been directly H plasma treated in a plasma enhanced chemical vapour system in order to study H subsurface defect formation. Raman spectroscopy, secondary ion mass...
- År
- 2011
- Type
- Vitenskapelig artikkel