Til hovedinnhold

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Kategori
Vitenskapelig artikkel
Sammendrag
The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.
Språk
Engelsk
Forfatter(e)
  • Margrethe Holmer Rein
  • M.V. Hohmann
  • Annett Thøgersen
  • Jeyanthinath Mayandi
  • Arve Holt
  • A Klein
  • Edouard Monakhov
Institusjon(er)
  • Institutt for energiteknikk
  • Technische Universität Darmstadt
  • SINTEF Industri / Bærekraftig energiteknologi
  • Madurai Kamaraj University
  • Universitetet i Oslo
År
Publisert i
Applied Physics Letters
ISSN
0003-6951
Forlag
American Institute of Physics (AIP)
Årgang
102
Hefte nr.
2