Publikasjoner og ansvarsområder
Characterization of SINTEF 3D diodes with trenched-electrode geometry before and after neutron irradiation
NOx detection by MoS2/hBN heterostructures
Edgeless sensors fabricated without support wafer
Radiation hard pixel '3D' sensors for use in ATLAS-ITk at LHC
In preparation for operation at the High Luminosity LHC, the tracking system of the ATLAS experiment is replaced with a new inner tracker, the ITk. The innermost layers of this system must be designed to withstand a fluence of more than 10^16 cm-2 1 MeV neutron equivalents. At SINTEF, Norway...
Test beam characterization of irradiated SINTEF 3D pixel sensors
Gas sensors based on 2D heterostructures
Assembly of Van der Waals Heterostructures for high performance devices
The isolation of graphene has resulted in an increase in the interest in two-dimensional materials. These materials can be selected based on their electronic structure, ranging from semiconductor to insulator. Moreover, the vertical stacking of these materials into heterostructures results in new...
Fabrication of active-edge detectors without support wafer using a unique "perforated edge" approach
Characterization of active-edge detectors fabricated without support wafer
Silicon radiation sensors typically have an inactive volume at the device periphery necessary to accommodate multiple guard-rings and current terminating structures necessary to deliver increased breakdown voltage and stability and to shield the active area from the defects induced by the dicing...