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Heat Transfer During Multiwire Sawing of Silicon Wafers

Heat Transfer During Multiwire Sawing of Silicon Wafers

Kategori
Tidsskriftspublikasjon
Sammendrag
During sawing of silicon wafers for the photovoltaic industry, the variations in temperature will influence the process performance and surface quality of the wafers. To investigate the significance of this effect, the temperature field and heat transfer have been studied experimentally and computationally. Among others, it is found that the temperature typically can increase from 30 °C at the inlet to 65 °C at the outlet of the sawing channel. It is also shown that viscous dissipation is by far the most significant heating source in the process.
Språk
Engelsk
Forfatter(e)
Institusjon(er)
  • SINTEF Digital / Smart Sensor Systems
  • SINTEF Industri / Prosessteknologi
År
2012
Publisert i
Journal of Thermal Science and Engineering Apllications
ISSN
1948-5085
Forlag
ASME International
Årgang
4
Hefte nr.
3