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Challenges of SiC MOSFET Power Cycling Methodology

Challenges of SiC MOSFET Power Cycling Methodology

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Del av bok/rapport
Sammendrag
This paper investigates the power cycling methodology for reliability testing of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). Dedicated test benches were designed and built to study this issue. The results indicate that power cycling of SiC MOSFETs is affected by threshold voltage instability. A proposal for reducing the influence of the latter is also given. This is done by adding an additional gate pulse to the device under test, in order to achieve an average bias of zero during one cycle of the power cycling experiment.
Oppdragsgiver
  • Norges forskningsråd / 244010
Språk
Engelsk
Forfatter(e)
  • Göthner Fredrik T. B. W.
  • Spro Ole Christian
  • Hernes Magnar
  • Peftitsis Dimosthenis
Institusjon(er)
  • Norges teknisk-naturvitenskapelige universitet
  • SINTEF Energi AS / Energisystemer
År
2018
Forlag
IEEE conference proceedings
Bok
20th European Conference on Power Electronics and Applications 2018
ISBN
978-9-0758-1528-3