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Improving the short circuit ruggedness of IGBTs

Improving the short circuit ruggedness of IGBTs

Kategori
Tidsskriftspublikasjon
Sammendrag
The demands on reliable and fault tolerant power electronic devices are increasing. One opportunity to increase the IGBT short circuit ruggedness is to modify the thermal capacitance and the thermal resistance close to the chip and hence extend the possible short circuit duration. Therefore simulations with different metallization, bond wire and chip interconnect materials are compared to identify the most promising solution for enhancing short circuit capability of IGBTs. © 2016 Elsevier Ltd
Oppdragsgiver
  • Norges forskningsråd / 244010
Språk
Engelsk
Forfatter(e)
Institusjon(er)
  • Technische Universität Chemnitz
  • SINTEF Energi AS / Energisystemer
År
2016
Publisert i
Microelectronics and reliability
ISSN
0026-2714
Årgang
64
Side(r)
519 - 523