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Possible failure modes in Press-Pack IGBTs

Possible failure modes in Press-Pack IGBTs

Kategori
Tidsskriftspublikasjon
Sammendrag
Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eight devices were tested until failure. A microscopy analysis has been performed on some of the failed devices, and they have all failed in a very similar manner. In order to gain additional information about the thermal-mechanical stress, a detailed 3D Finite Element Method (FEM)-analysis has been conducted. The combined results from power cycling, microscopy and FEM have been concluded to two possible failure modes in Press-Pack IGBTs: Gate oxide damage and micro arcing. © 2015 Elsevier Ltd
Oppdragsgiver
  • Norges forskningsråd / 191031
Språk
Engelsk
Forfatter(e)
  • Tinschert Lukas
  • Årdal Atle Rygg
  • Poller Tilo
  • Bohlländer Marco
  • Hernes Magnar
  • Lutz Josef
Institusjon(er)
  • Technische Universität Chemnitz
  • SINTEF Energi AS / Energisystemer
År
2015
Publisert i
Microelectronics and reliability
ISSN
0026-2714
Årgang
55
Hefte nr.
6
Side(r)
903 - 911