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Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation

Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation

Kategori
Vitenskapelig artikkel
Sammendrag
Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported rapid and slow decays, but a satisfactory fit to a single exponential function could not be achieved. We found, however, that both decay curves, for all the investigated samples, can be fitted very well to the solution of a simple second-order rate equation. This indicates that the defect generation process can be described by second-order reaction kinetics. The new information is used to discuss the role of holes in the defect reaction and the rate-determining steps of the rapid and slow defect reactions.
Oppdragsgiver
  • Research Council of Norway (RCN) / 181884
Språk
Engelsk
Forfatter(e)
  • Tine Uberg Nærland
  • Halvard Haug
  • Hallvard Angelskår
  • Rune Søndenå
  • Erik Stensrud Marstein
  • Lars Arnberg
Institusjon(er)
  • Norges teknisk-naturvitenskapelige universitet
  • Institutt for energiteknikk
  • SINTEF Digital / Microsystems and Nanotechnology
År
2013
Publisert i
IEEE Journal of Photovoltaics
ISSN
2156-3381
Årgang
3
Hefte nr.
4
Side(r)
1265 - 1270