Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity

Oppdragsgiver

• Research Council of Norway (RCN) / 280788
• Research Council of Norway (RCN) / 245963/F50

Forfatter(e)

• Vishakha Kaushik
• Mujeeb Ahmad
• Agarwal Khushboo
• Deepak Varandani
• Branson Belle
• Pintu Das
• Bodh R. Mehta

Institusjon(er)

• Indian Institute of Technology, Delhi
• SINTEF Industri / Bærekraftig energiteknologi

Hefte nr.

42

DOI

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