Til hovedinnhold

Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity

Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity

Kategori
Vitenskapelig artikkel
Oppdragsgiver
  • Research Council of Norway (RCN) / 280788
  • Research Council of Norway (RCN) / 245963/F50
Språk
Engelsk
Forfatter(e)
  • Vishakha Kaushik
  • Mujeeb Ahmad
  • Agarwal Khushboo
  • Deepak Varandani
  • Branson Belle
  • Pintu Das
  • Bodh R. Mehta
Institusjon(er)
  • Indian Institute of Technology, Delhi
  • SINTEF Industri / Bærekraftig energiteknologi
År
Publisert i
Journal of Physical Chemistry C
ISSN
1932-7447
Forlag
American Chemical Society (ACS)
Årgang
124
Hefte nr.
42
Side(r)
23368 - 23379