Publications and responsibilities
Structure loss in Czochralski silicon ingots
Impact of thermal history on defects formation in the last solid fraction of Cz silicon ingots
Nonlinear model predictive control of the Czochralski Process
Commercially, the Czochralski process is the most commonly applied method for production of monocrystalline silicon for semiconductor and solar cell applications. The process has traditionally been controlled using nested single-loop controllers. Due to the complex and nonlinear nature of the Cz pro...
Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon
Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e.g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A ...
Impact of diameter fluctuations on thermal stresses during Czochralski silicon growth
Variation of crystal radius during the growth process is an inevitable feature of Czochralski crystal growth method. Fluctuation in the system i.e. heating power, pulling rate and melt level perturbs the stability of the growth process during Czochralski silicon growth. Highly uneven topographies ar...
Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth
The shape of the melt/crystal interface in Czochralski grown silicon crystal is a result of the interaction of several phenomena. In particular, melt convection plays a key role as it affects the heat and mass transfer inside the melt. Depending on the growth conditions and heat transfer in the melt...