Abstract
SINTEF in collaboration with University of Oslo have been performing R&D activities on 3D detectors with the aim to qualify to be a production site for ITk upgrade. In this context, a 3D detector
fabrication run has been completed recently with very promising results. Various sensor geometries
with active edges were implemented, and the fabrication was carried out on 6-inch Si-Si wafers with
sensor substrate thicknesses of 100 µm and 50 µm using single-sided processing approach. We will
present the electrical test results; assembly, irradiation and test beam plans; and the plans for the
next fabrication run
fabrication run has been completed recently with very promising results. Various sensor geometries
with active edges were implemented, and the fabrication was carried out on 6-inch Si-Si wafers with
sensor substrate thicknesses of 100 µm and 50 µm using single-sided processing approach. We will
present the electrical test results; assembly, irradiation and test beam plans; and the plans for the
next fabrication run