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Hallvard Angelskår

Research Manager

Hallvard Angelskår

Research Manager

Hallvard Angelskår
Phone: 481 77 284
Email:
Unit: SINTEF Digital
Department: Microsystems and Nanotechnology
Office: Oslo
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Publications and responsibilities

Publication

Design and Simulation of Efficient Narrowband Thermal Emitter with 3 µm wavelength

https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1473120

A low-power infrared source based on a silicon photonic-crystal membrane has been designed. Temperature distribution and reflection spectrum has been simulated. Large narrowband IR absorption is obtained with optimal material doping....

Authors Grepstad Jon Olav Gjessing Jo Angelskår Hallvard Skokic Zeljko Bakke Thor Herbjørnrød Aina Kristin Sudbø Aasmund
Year 2016
Type Conference lecture and academic presentation
Publication

Design and simulation of efficient narrowband thermal emitter with 3 μm wavelength

https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1456583

A low-power infrared source based on a silicon photonic-crystal membrane has been designed. Temperature distribution and reflection spectrum has been simulated. Large narrowband IR absorption is obtained with optimal material doping...

Authors Grepstad Jon Olav Gjessing Jo Angelskår Hallvard Skokic Zeljko Bakke Thor Sudbø Aasmund
Year 2016
Type Part of a book/report
Publication

Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation

https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1056694

Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements....

Authors Nærland Tine Uberg Haug Halvard Angelskår Hallvard Søndenå Rune Marstein Erik Stensrud Arnberg Lars
Year 2013
Type Journal publication
Publication

Characterization of the OSF-band structure in n-type Cz-Si using photoluminescence-imaging and visual inspection

https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1026971

Oxygen induced stacking faults (OSFs) are mainly seen in oxygen rich wafers from the seed end of Cz-silicon crystals. In wafers this ring shaped OSF-region delineates a border between two defect regions; usually silicon self-interstitials dominate outside and vacancies inside this ring. High tempera...

Authors Søndenå Rune Hu Yu Juel Mari Wiig Marie Syre Angelskår Hallvard
Year 2013
Type Journal publication
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