The New Reduced-Price Model at SINTEF MiNalab offers an opportunity for prototyping and production at a competitive price. The service offers a unique opportunity to benefit from SINTEF's over 40 years expertise in the field of silicon radiation detectors!
In our recent remodelling of business model, we can now offer a new, lower rate on silicon sensor fabrication for all our standard 4- or 5- layer process, with guaranteed specifications for our standard pad diodes.
• Standard 4- or 5-layer (with passivation) p-on-n process
The new business model also allows the same competitive rate on two of our new technologies that are currently at prototyping level:
• N-on-p technology
• Edgeless and slim edge technology
Detailed terms and conditions will be agreed upon individual basis.
Our sensors are fabricated on high-quality 150 mm diameter, FZ silicon wafers. Together with our state-of-the-art fabrication technology, the dark current of our standard pad diode can be as low as 200 pA/cm2. The wafer thickness can be selected from a range between 300 μm and 1 mm.
The detector design can be provided by the customer or performed by SINTEF at our fixed hourly rate. Additional electrical characterisation or dicing can also be performed at an hourly rate. The cost for the photomask set will be quoted according to the pricing given by our supplier.
For more information, please contact:
