Focused Ion Beam – Scanning Electron Microscopy (FIB-SEM)
In 2025 we upgraded to a TESCAN SOLARIS FIB-SEM platform combines high-resolution electron imaging with precise ion milling, enabling advanced sample preparation and analysis at the micro- and nanoscale.
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What is SEM-FIB?
- SEM (Scanning Electron Microscopy): Produces ultra-high-resolution images of surfaces, revealing morphology, structure, and composition.
- FIB (Focused Ion Beam): Uses a finely focused gallium ion beam to mill, cut, or deposit material with nanometer precision.
Our Capabilities:
- TEM Lamella Preparation: Site-specific thinning for atomic-scale imaging.
- Cross-Sectioning & Delayering: For failure analysis and device exploration.
- 3D Tomography: Slice-and-view reconstruction for 3D volumetric analysis.
- Nanofabrication: Patterning, deposition, and selective etching.
- High-Resolution SEM Imaging: Down to 0.5 nm for detailed surface characterization.
- Chemical composition: Elemental mapping and quantification.
- Inert Sample Transfer: Ability to move samples between the FIB and a glove box inertly, and then onwards to the FEG-SEM, XPS, and TEM.
Applications:
- Semiconductor failure analysis and device R&D
- Energy and functional materials
- Microelectronics and nanostructures
- Correlative 3D analysis with EDS
Why it matters:
By integrating SEM and FIB in a single chamber, this system allows imaging and modification without sample transfer—reducing contamination and improving accuracy. This is essential for advanced materials research, semiconductor development, and micro/nano-fabrication.
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