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Investigation of the energy pathway for generation of dislocations in silicon at Σ3 grain boundaries with the kinetic Activation-Relaxation Technique

Investigation of the energy pathway for generation of dislocations in silicon at Σ3 grain boundaries with the kinetic Activation-Relaxation Technique

Category
Conference lecture and academic presentation
Language
English
Author(s)
Affiliation
  • Norwegian University of Science and Technology
  • Norwegian University of Science and Technology
  • SINTEF Industry / Materials and Nanotechnology
Presented at
Multiscale Materials Modelling
Place
Osaka
Date
27.10.2018 - 01.11.2018
Year
2018