To main content

Optical and microstructural investigation of heavy B-doping effects in sublimation-grown 3C-SiC

Optical and microstructural investigation of heavy B-doping effects in sublimation-grown 3C-SiC

Category
Journal publication
Abstract
In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000°C have been cross-correlated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects.
Client
  • NORTEM / 197405
  • Norges forskningsråd / 229711
  • Notur/NorStore / nn2615k
Language
English
Author(s)
Affiliation
  • University of Oslo
  • University of Oslo
  • SINTEF Industry / Sustainable Energy Technology
  • SINTEF Digital / Smart Sensor Systems
  • Linköping University
Year
2018
Published in
Materials Science Forum
ISSN
0255-5476
Publisher
Trans Tech Publications Inc.
Volume
924
Page(s)
221 - 224