Abstract
Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes
penetrate through the entire substrate, have many advantages over planar silicon sensors
including radiation hardness, fast time response, active edge and dual readout capabilities. The
fabrication of 3D sensors is however rather complex. In recent years, there have been
worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication
Facility have successfully fabricated the original (single sided double column type) 3D detectors
in two prototype runs and the third run is now on-going. This paper reports the status of this
fabrication work and the resulted yield. The work of other groups such as the development of
double sided 3D detectors is also briefly reported.
penetrate through the entire substrate, have many advantages over planar silicon sensors
including radiation hardness, fast time response, active edge and dual readout capabilities. The
fabrication of 3D sensors is however rather complex. In recent years, there have been
worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication
Facility have successfully fabricated the original (single sided double column type) 3D detectors
in two prototype runs and the third run is now on-going. This paper reports the status of this
fabrication work and the resulted yield. The work of other groups such as the development of
double sided 3D detectors is also briefly reported.