To main content

Al-Al Wafer-Level Thermocompression Bonding applied for MEMS

Al-Al Wafer-Level Thermocompression Bonding applied for MEMS

Category
Academic chapter/article/Conference paper
Abstract
Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are problematic with respect to cross contamination in labs. Au and Cu are commonly used for TCB and the oxidation of these metals is limited (Au) or easily controlled (Cu). However, despite Al oxidation, our experimental results and theoretical considerations show that TCB using Al is feasible even at temperatures down to 300−350 °C using a commercial bonder without in-situ surface treatment capability.
Client
  • Research Council of Norway (RCN) / 210601
  • Research Council of Norway (RCN) / 247781
Language
English
Author(s)
Affiliation
  • SINTEF Digital / Smart Sensor Systems
  • SINTEF Digital / Microsystems and Nanotechnology
  • University of Oslo
Year
Publisher
IEEE
Book
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), Tokyo, 16-18 May 2017
ISBN
978-4-904743-03-4
Page(s)
11