To main content

Low-temperature bonding technologies for MEMS and 3D-IC

Abstract

Recent developments within MEMS and IC call for a reduction in bonding temperature down to 350 °C and below. For MEMS, sensitive mechanical structures, thinned wafers, and heterogeneous integration of temperature-sensitive materials or materials with dissimilar temperature responses are main driving forces. For 3D-ICs, transistors' sensitivity to stress, and stress-induced failures in fragile dielectric layers are important motivations. The ongoing research on low-temperature bonding in the fields of MEMS and 3D-IC integration are partly overlapping. Therefore, extended knowledge exchange can be of mutual benefit, and will be attempted in this invited talk.

Category

Academic chapter/article/Conference paper

Client

  • Research Council of Norway (RCN) / 229945
  • Research Council of Norway (RCN) / 210601

Language

English

Author(s)

  • Maaike Margrete Visser Taklo
  • Kari Schjølberg-Henriksen
  • Nishant Malik
  • Hannah Rosquist Tofteberg
  • Erik Poppe
  • David Oscar Vella
  • Joshua Borg
  • Alastair Attard
  • Zlatko Hajdarevic
  • Armin Klumpp
  • Peter Ramm

Affiliation

  • SINTEF Digital / Smart Sensor Systems
  • SINTEF Digital / Microsystems and Nanotechnology
  • University of Oslo
  • Malta
  • Austria
  • Fraunhofer Research Institution for Modular Solid State Technologies EMFT

Year

2014

Publisher

IEEE

Book

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), Tokyo, Japan, 15-16 July 2014

ISBN

978-1-4799-5260-1

Page(s)

129 - 133

View this publication at Cristin