Abstract
Recent developments within MEMS and IC call for a reduction in bonding temperature down to 350 °C and below. For MEMS, sensitive mechanical structures, thinned wafers, and heterogeneous integration of temperature-sensitive materials or materials with dissimilar temperature responses are main driving forces. For 3D-ICs, transistors' sensitivity to stress, and stress-induced failures in fragile dielectric layers are important motivations. The ongoing research on low-temperature bonding in the fields of MEMS and 3D-IC integration are partly overlapping. Therefore, extended knowledge exchange can be of mutual benefit, and will be attempted in this invited talk.