GO2DEVICE – Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices
13 March 2020
The aim of the GO2DEVICE project is to develop a new transistor for use in the power electronics sector, which has the potential to become faster, smaller and operate at higher power than existing options. Power electronics (PE) play an important role in the collection, delivery and storage of energy, and is a key enabler for energy efficiency, renewable energy and smart grids. Silicon-based PE components have been optimized to the point where further improvements start to be limited by the materials properties themselves, and in order to meet the needs predicted for a sustainable society, new materials are targeted. Among the newest candidates is gallium oxide (Ga2O3), which is a wide bandgap semiconductor with an ultra-high breakdown field.