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The microwave dielectric properties of dual-layer PZT/ZrO₂thin films deposited by chemical solution deposition

Abstract

The dielectric properties of dual-layer PZT/ZrO2 thin films were measured at microwave frequencies in both a metal–insulator–metal (MIM) capacitor and a coplanar waveguide (CPW) up to 50 GHz. Both PZT and ZrO2 films were prepared by the chemical solution deposition method. The measured dielectric loss of the PZT/ZrO2 film was approximately 0.08 at 30 GHz, much lower than that of typical PZT thin films. The dielectric constants obtained using the MIM capacitor with 360 nm PZT/65 nm ZrO2 and using the CPW with 420 nm PZT/280 nm ZrO2 were 47 and 130, respectively, at 50 GHz. Capacitance tunability was ~30% at +25 V and up to 50 GHz. The measured values obtained indicate that PZT/ZrO2 thin films may be suitable for the use of dielectric layers in tunable RF devices and RF MEMS capacitive switches operating at millimetre wave frequencies.


Category

Academic article

Language

English

Author(s)

  • Deokki Min
  • Nils Hoivik
  • Geir Uri Jensen
  • Frode Tyholdt
  • Ulrik Hanke

Affiliation

  • University of South-Eastern Norway
  • SINTEF Digital / Smart Sensors and Microsystems

Year

2011

Published in

Journal of Physics D: Applied Physics

ISSN

0022-3727

Publisher

IOP Publishing

Volume

44

Issue

25

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