Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon
Category
Academic article
Language
English
Author(s)
- Gaute Stokkan
- S. Riepe
- Otto Lohne
- W. Warta
Year
2007Published in
Journal of Applied Physics
ISSN
0021-8979
Volume
101
Page(s)
053515-1 - 053515-9
View this publication at Norwegian Research Information Repository