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Single digit parts-per-billion NOx detection using MoS2/hBN transistors

Abstract

2D materials offer excellent possibilities for high performance gas detection due to their high surface-to-volume ratio, high surface activities, tunable electronic properties and dramatic change in resistivity upon molecular adsorption. This paper demonstrates a simple field effect transistor (FET) of molybdenum disulphide (MoS2) fabricated on a hexagonal boron nitride (hBN) substrate that can detect NOx down to concentrations of 6 ppb and possibly far below at room temperature (RT) with a systematic optimization of the device design and fabrication parameters as well as the device operating conditions. The effects of the substrate, number of MoS2 layers, channel layout and biasing conditions on the response of MoS2 FETs to NOx were investigated, providing directions for maximizing the sensitivity. This work also sheds light the issues of recovery and stability and present a methodology for calibration of the sensors which is critical for repeatable and reliable measurements.
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Category

Academic article

Language

English

Author(s)

Affiliation

  • SINTEF Industry / Sustainable Energy Technology
  • SINTEF Digital / Smart Sensors and Microsystems
  • Indian Institute of Technology, Delhi
  • University of Tsukuba
  • University of Sindh

Year

2020

Published in

Sensors and Actuators A-Physical

ISSN

0924-4247

Volume

315

View this publication at Norwegian Research Information Repository