To main content

Atomistic approach to simulate kink migration and kink-pair formation in silicon: The kinetic activation-relaxation technique

Read publication

Category

Academic article

Client

  • Research Council of Norway (RCN) / 255326
  • Sigma2 / NN9158K

Language

English

Author(s)

Affiliation

  • Norwegian University of Science and Technology
  • SINTEF Industry / Materials and Nanotechnology
  • University of Montreal
  • National Center for Scientific Research

Year

2019

Published in

Physical review B (PRB)

ISSN

2469-9950

Volume

100

Issue

15

View this publication at Cristin