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Protection of MOS Capacitors during Anodic Bonding

Abstract

When packaging monolithic sensors by anodic bonding, protection of the
electronics is crucial. We have investigated two different methods for
protecting MOS capacitors from damage during anodic bonding. Our first
approach was to etch 50 µm deep cavities in the Pyrex glass, lowering
the electric field across the cavity during bonding. The second
protection method was to coat the inside of a 10 µm deep Pyrex cavity
with aluminium, forming a Faraday cage during anodic bonding. With both
methods, we obtained unchanged CV curves when measuring the capacitors
after bonding. In comparison, unprotected capacitors situated in a 10
µm deep Pyrex cavity exhibited increased leakage current after anodic
bonding.

Category

Academic lecture

Language

English

Author(s)

  • Kari Schjølberg-Henriksen
  • Jose Antonio Plaza
  • Joan Marc Rafí
  • Jaume Esteve
  • Francesca Campabadal
  • Joaquín Santander
  • Geir Uri Jensen
  • Anders Bror Hanneborg

Affiliation

  • SINTEF Digital / Microsystems and Nanotechnology
  • Unknown
  • University of Oslo

Presented at

MME Europe 12th Micromechanics Europe Workshop

Place

Cork, Ireland

Date

16.09.2001

Year

2001

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