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Pressure Sensor for Harsh Environments Realized by Triple-Stack Fusion Bonding

Abstract

Fusion bonding of three separate wafers into a triple stack has been
performed to manufacture a pressure sensor for oil well monitoring. A
bond strength (Si/SiO2) of 5-15 MPa is achieved after annealing at
1000oC. The aluminum contact pads were applied by sputtering through a
mechanical mask prebonded onto the triple stack. The sensor withstands
an absolute pressure of 1000 Bar, and it can be operated at 200oC. A
zero shift of less than 2,5% of FSO is observed.

Category

Academic lecture

Language

English

Author(s)

  • Maaike Margrete Visser Taklo
  • Dag Thorstein Wang
  • Sigurd Moe
  • Kari Schjølberg-Henriksen
  • Anders Bror Hanneborg

Affiliation

  • SINTEF Digital / Smart Sensors and Microsystems
  • University of Oslo

Presented at

Fifth International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications

Place

Honolulu, Hawaii

Date

17.10.1999

Year

1999

View this publication at Cristin