Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process
Category
Academic lecture
Language
English
Author(s)
- Satoshi Nakano
- Bing Gao
- Koichi Kakimoto
Affiliation
- Unknown
- SINTEF Industry / Metal Production and Processing
Presented at
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
Date
07.08.2016 - 12.08.2016