Abstract
Manufacturing full 3D sensors with active edge on a production scale has been attempted at SINTEF MiNaLab. During the first prototype run, problems such as wafer fragility and difficulties in lithography were encountered, resulted a very low overall wafer yield. These issues have now been addressed in the second prototype run and the wafer yield has increased from 10% to about 80%. Electrical measurements on individual ATLAS FE-I3 and CMS 1ROC detectors are also promising. A leakage current of less than 0.5 nA per pixel at full depletion had been measured on selected FE-I3 detectors and 1ROC detectors with a breakdown voltage of about 120V. This talk will discuss the current status of 3D sensor development at SINTEF MiNaLab. The latest results on fully completed detectors and the performance variations after under bump metallisation (UBM) will also be discussed.