In the present study simulation of silicon process in laboratory scale inductive furnace was investigated. Graphite crucibles filled by mixture of SiC, SiO2 and Si metal were heated up to adequate temperature, which occurs in industrial furnaces. Two experiments were performed.Vertical cross section of crucible in both cases showed the same zones in similar temperature range. Moreover cavity was created around 1650 - 1750 ºC in both trials and two kinds of condensate appeared (brown and white). Silicon droplets in condensate were found in the zone where relatively low temperature was achieved around 1300 ºC inside the SiC particles. The obtained data of such experiment can be used for better understanding Si process, especially condensate and cavity formation.