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Hermeticity and Reliability of Au-Au Thermocompression Bonds, Realized at Low Temperature

Abstract

Hermeticity and reliability of four laminates bonded at different temperatures by Au-Au thermocompression bonding have been investigated. Laminates of diameter 150 mm were realized by bonding a wafer containing membrane structures to Si wafers with patterned bond frames. The laminates were bonded applying a bonding pressure of 8.5 MPa at temperatures of 150–300 °C for 15 minutes. The hermetic properties were estimated by measurement of membrane deflection at two different times after bonding. Reliability was tested by exposing the laminates to a steady-state life test, a thermal shock test, and a moisture resistance test. A dicing yield above 90 % was obtained for laminates bonded at or above 150 °C. Laminates bonded at 200 °C and above had significantly higher hermetic yield than the laminate bonded at 150 °C. No degradation in hermeticity was observed after the reliability tests. A maximum leak rate in the range of 10-11 mbar×l×s-1 was estimated.

Category

Academic chapter/article/Conference paper

Client

  • Research Council of Norway (RCN) / 210601

Language

English

Author(s)

  • Nishant Malik
  • Hannah Rosquist Tofteberg
  • Erik Poppe
  • Terje Finstad
  • Kari Schjølberg-Henriksen

Affiliation

  • University of Oslo
  • SINTEF Digital / Microsystems and Nanotechnology

Year

2014

Publisher

The Electrochemical Society

Book

2014 ECS and SMEQ Joint International Meeting, October 5, 2014 - October 9, 2014 Semiconductor Wafer Bonding 13: Science, Technology, and Applications

Issue

5

ISBN

978-1-62332-185-7

Page(s)

167 - 176

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