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Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Abstract

The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1 – 4 mm2, the bonded interface was found to have a capacitance ranging from 2.62 pF/mm2 – 2.89 pF/mm2 at 1 kHz. Linear I-V curves showing ohmic behavior without hysteresis and a resistance around 2.2 W were measured at DC voltage. We speculate that the capacitive and resistive responses are related to traps that are formed during the plasma activation process. The applied bonding process resulted in hermetic sealing with 100% yield on 2 × 481 dies. The maximum leak rate of the seals was 3.5 × 10-11 mbar×l×s-1, but could be significantly lower. No gross leaks were observed following a steady-state life test, a thermal shock test, and a moisture resistance test applied on 100 dies.

Category

Academic chapter/article/Conference paper

Client

  • Research Council of Norway (RCN) / 210601

Language

English

Author(s)

  • Kari Schjølberg-Henriksen
  • Nishant Malik
  • Elin Vold Gundersen
  • Oscar Rincon Christiansen
  • Kristin Imenes
  • Sigurd T. Moe

Affiliation

  • SINTEF Digital / Smart Sensors and Microsystems
  • University of Oslo
  • University of South-Eastern Norway

Year

2014

Publisher

The Electrochemical Society

Book

2014 ECS and SMEQ Joint International Meeting, October 5, 2014 - October 9, 2014 Semiconductor Wafer Bonding 13: Science, Technology, and Applications

Issue

5

ISBN

978-1-62332-185-7

Page(s)

275 - 284

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