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Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation

Abstract

Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported rapid and slow decays, but a satisfactory fit to a single exponential function could not be achieved. We found, however, that both decay curves, for all the investigated samples, can be fitted very well to the solution of a simple second-order rate equation. This indicates that the defect generation process can be described by second-order reaction kinetics. The new information is used to discuss the role of holes in the defect reaction and the rate-determining steps of the rapid and slow defect reactions.

Category

Academic article

Client

  • Research Council of Norway (RCN) / 181884

Language

English

Author(s)

  • Tine Uberg Nærland
  • Halvard Haug
  • Hallvard Angelskår
  • Rune Søndenå
  • Erik Stensrud Marstein
  • Lars Arnberg

Affiliation

  • Norwegian University of Science and Technology
  • Institute for Energy Technology
  • SINTEF Digital / Microsystems and Nanotechnology

Year

2013

Published in

IEEE Journal of Photovoltaics

ISSN

2156-3381

Volume

3

Issue

4

Page(s)

1265 - 1270

View this publication at Cristin