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3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

Abstract

3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

Category

Academic article

Language

English

Author(s)

  • Cinzia Da Via
  • Maurizio Boscardil
  • GianFranco Betta
  • Giovanni Darbo
  • Celeste Fleta
  • Claudia Gemme
  • Gabriele Giacomini
  • Philippe Grenier
  • Sebastian Grinstein
  • Thor-Erik Hansen
  • Jasmine Hasi
  • Christopher Kenney
  • Angela Kok
  • Alessandro La Rosa
  • Andrea Micelli
  • Sherwood Parker
  • Guilio Pellegrini
  • David-Leon Pohl
  • Marco Povoli
  • Elisa Vianello
  • Nicola Zorzi
  • S.J. Watts

Affiliation

  • University of Manchester
  • Fondazione Bruno Kessler
  • University of Trento
  • National Institute of Nuclear Physics
  • Centro Nacional de Microelectrónica
  • SLAC National Accelerator Laboratory
  • Autonomous University of Barcelona
  • SINTEF Digital / Microsystems and Nanotechnology
  • European Organisation for Nuclear Research
  • University of Udine
  • University of Hawaii System
  • University of Bonn

Year

2013

Published in

Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

Volume

699

Page(s)

18 - 21

View this publication at Cristin