In the GO2DEVICE project, we will study a special variety of Ga2O3, the so-called kappa-phase. Theoretical calculations suggest that the band structure (a semiconductor characteristics) of this phase may allow for the formation of 2D electron gas, i.e., an interface where electrons can move without resistance. By partially replacing gallium with indium and aluminium, precise tailoring of the materials properties will be pursued, towards fabrication of a so-called high-electron-mobility transistor (HEMT). To accomplish a working prototype, however, close control of structural and electronic properties is of paramount importance. In the GO2DEVICE project, advanced materials characterization and modeling will provide feedback to the materials synthesis in a close international collaboration between young and accomplished scientists.
The project is a "Young Research Talent" project funded by the Research Council of Norway. It is lead by SINTEF and includes scientists from the University of Oslo (Norway), the University of Leipzig (Germany), City University of Hong Kong (China), ETH Zürich (Switzerland) and the ABB Corporate Research Center (Switzerland).