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GO2DEVICE – Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices

GO2DEVICE – Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices

The aim of the GO2DEVICE project is to develop a new transistor for use in the power electronics sector, which has the potential to become faster, smaller and operate at higher power than existing options. Power electronics (PE) play an important role in the collection, delivery and storage of energy, and is a key enabler for energy efficiency, renewable energy and smart grids. Silicon-based PE components have been optimized to the point where further improvements start to be limited by the materials properties themselves, and in order to meet the needs predicted for a sustainable society, new materials are targeted. Among the newest candidates is gallium oxide (Ga2O3), which is a wide bandgap semiconductor with an ultra-high breakdown field.

In the GO2DEVICE project, we will study a special variety of Ga2O3, the so-called kappa-phase. Theoretical calculations suggest that the band structure (a semiconductor characteristics) of this phase may allow for the formation of 2D electron gas, i.e., an interface where electrons can move without resistance. By partially replacing gallium with indium and aluminium, precise tailoring of the materials properties will be pursued, towards fabrication of a so-called high-electron-mobility transistor (HEMT). To accomplish a working prototype, however, close control of structural and electronic properties is of paramount importance. In the GO2DEVICE project, advanced materials characterization and modeling will provide feedback to the materials synthesis in a close international collaboration between young and accomplished scientists.

The project is a "Young Research Talent" project funded by the Research Council of Norway. It is lead by SINTEF and includes scientists from the University of Oslo (Norway), the University of Leipzig (Germany), City University of Hong Kong (China), ETH Zürich (Switzerland) and the ABB Corporate Research Center (Switzerland).

Published 13 March 2020
Senior Research Scientist
982 30 513

Project duration

01/01/2020 - 31/07/2023