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Sigurd T. Moe

Senior Research Scientist

Sigurd T. Moe

Senior Research Scientist

Sigurd T. Moe
Phone: 975 80 163
Department: Microsystems and Nanotechnology
Office: Oslo

Publications and responsibilities

Publication
https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1657936

Thermo-mechanical stability of metal structures is one of the key factors affecting accuracy of micro-electromechanical (MEMS) piezoresistive pressure sensors. In this work, we present the measurement results of stress and hysteresis for the following metals deposited in the same sputtering equipmen...

Authors Vereshchagina Elizaveta Poppe Erik Utne Schjølberg-Henriksen Kari Wöhrmann Markus Moe Sigurd T.
Year 2018
Type Part of a book/report
Publication
https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1479512

Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are problematic with respect to cross contamination in labs. Au and Cu are common...

Authors Taklo Maaike M. Visser Schjølberg-Henriksen Kari Malik Nishant Poppe Erik Utne Moe Sigurd T. Finstad Terje
Year 2017
Type Part of a book/report
Publication
https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1406279

The effect of bond anneal in Si-Si direct bonding of laminates With thin membranes suspending closed cavities is studied. For membranes of a certain size and thickness, it is found that the under-pressure in the cavity during bond anneal leads to plastic deformation of the membrane. By controlling t...

Authors Poppe Erik Utne Jensen Geir Uri Moe Sigurd T. Wang Dag Thorstein
Year 2016
Type Journal publication
Publication
https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1243745

The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1–4 mm2, the bonded interface was found to have a capacitance ranging from 2.62 pF/mm2–2.89 pF/mm2 at 1 kHz. Linear ...

Authors Schjølberg-Henriksen Kari Malik Nishant Gundersen Elin Vold Christiansen Oscar Rincon Imenes Kristin Fournel Frank Moe Sigurd T.
Year 2015
Type Journal publication
Publication
https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1220047

Silicon direct wafer bonding is a process with many application areas. Depending on the application, perfect insulation or negligible resistance is desired across the bonded interface. We have investigated the resistivity of hydrophilic high-temperature silicon direct wafer bonds by measuring the re...

Authors Schjølberg-Henriksen Kari Tvedt Lars Geir Whist Gjelstad Stein Are Mørk Christopher Moe Sigurd T. Imenes Kristin Poppe Erik Wang Dag Thorstein
Year 2015
Type Journal publication
Publication
https://www.sintef.no/en/publications/publication/?pubid=CRIStin+1163871

Metal-based thermocompression bonding enables the creation of hermetic seals formed at relatively low processing temperatures and occupying a small portion of the device area. In the current study we have investigated the application of scanning acoustic microscopy (SAM) for assessing the quality of...

Authors Brand Sebastian Tismer Sebastian Moe Sigurd T. Schjølberg-Henriksen Kari
Year 2015
Type Journal publication