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Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation

Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation

Category
Journal publication
Abstract
Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported rapid and slow decays, but a satisfactory fit to a single exponential function could not be achieved. We found, however, that both decay curves, for all the investigated samples, can be fitted very well to the solution of a simple second-order rate equation. This indicates that the defect generation process can be described by second-order reaction kinetics. The new information is used to discuss the role of holes in the defect reaction and the rate-determining steps of the rapid and slow defect reactions.
Client
  • Norges forskningsråd / 181884
Language
English
Author(s)
  • Nærland Tine Uberg
  • Haug Halvard
  • Angelskår Hallvard
  • Søndenå Rune
  • Marstein Erik Stensrud
  • Arnberg Lars
Affiliation
  • Norwegian University of Science and Technology
  • Institute for Energy Technology
  • SINTEF Digital / Microsystems and Nanotechnology
Year
2013
Published in
IEEE Journal of Photovoltaics
ISSN
2156-3381
Publisher
IEEE Geoscience and Remote Sensing Society
Volume
3
Issue
4
Page(s)
1265 - 1270