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Recent developments and future perspectives in 3D silicon radiation sensors

Abstract

In this paper we report on the most recent achievements of the ATLAS 3D Sensors Collaboration in the development of silicon 3D sensors. Results from 3D pixels production for the ATLAS Insertable B-Layer (IBL) are presented, showing the high quality and good process reproducibility of the technology. In view of the future detector upgrades at the LHC, a new generation of 3D pixel sensors will be developed. This will require some new ideas and the solution of technological challenges. Both will briefly be addressed in this paper.

Category

Academic article

Language

English

Author(s)

  • Gian-Franco Dalla Betta
  • Cinzia Da Via
  • M Povoli
  • Sherwood Parker
  • Maurizio Boscardin
  • Giovanni Darbo
  • Sebastian Grinstein
  • Philippe Grenier
  • Jasmine Hasi
  • Chris Kenney
  • Angela Kok
  • CH Lai
  • Giulio Pellegrini
  • Stephen Watts

Affiliation

  • SINTEF Digital / Smart Sensors and Microsystems
  • University of Trento
  • National Institute of Nuclear Physics
  • Fondazione Bruno Kessler
  • Catalan Institution for Research and Advanced Studies
  • Centro Nacional de Microelectrónica
  • University of Manchester
  • University of Hawaii at Manoa
  • SLAC National Accelerator Laboratory

Year

2012

Published in

Journal of Instrumentation (JINST)

Volume

7

View this publication at Norwegian Research Information Repository