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H-initiated extended defects from plasma treatment: Comparison between c-Si and mc-Si

Category

Conference lecture

Language

English

Author(s)

  • Heidi Nordmark
  • Alexander Ulyashin
  • John Walmsley
  • Randi Holmestad

Affiliation

  • SINTEF
  • Norwegian University of Science and Technology

Presented at

International Conference on Extended Defects in Semiconductors (EDS2010)

Place

Brighton

Date

19.09.2010 - 24.09.2010

Year

2010

View this publication at Norwegian Research Information Repository