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Modelling of charging effects caused by anodic bonding in packaged MOS devices

Abstract

The electrical effects of anodic bonding on the gate oxide of packaged
MOS devices are presented, and shown to be dependent both on the gate
oxide fabrication process and on the design of the glass cavity. We
propose methods to incorporate these effects in the device models to
ensure reliable circuit simulations for the wafer-level packaged
devices.

Category

Academic article

Language

English

Author(s)

  • Kari Schjølberg-Henriksen
  • Tor A Fjeldly
  • Joaquín Santander
  • Jose Antonio Plaza
  • Anders Bror Hanneborg

Affiliation

  • SINTEF Digital / Microsystems and Nanotechnology
  • University of Oslo
  • Unknown

Year

2002

Published in

Electronics Letters

ISSN

0013-5194

Volume

38

Issue

24

Page(s)

1596 - 1697

View this publication at Cristin