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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Abstract

Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiOx) film passivation properties, improving minority carrier lifetime (τeff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlOy/TiOx) reduced the sheet resistance by 40% compared with pure TiOx. It was also revealed that the passivation quality of the (AlOy/TiOx) stack depends on the precursor and ratio of AlOy to TiOx deposition cycles.
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Category

Academic article

Language

English

Author(s)

  • Vladyslav Matkivskyi
  • Oskari Leiviska
  • Sigurd Wenner
  • Hanchen Liu
  • Ville Vahanissi
  • Hele Savin
  • Marisa Di Sabatino
  • Maria Gabriella Tranell

Affiliation

  • SINTEF Industry / Materials and Nanotechnology
  • Aalto University
  • Norwegian University of Science and Technology

Year

2023

Published in

Materials

Volume

16

Issue

16

View this publication at Norwegian Research Information Repository