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High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

Abstract

Two-dimensional heterostructure field-effect transistors (2D-HFETs) with one-dimensional electrical contacts to atomically thin channels have recently shown great device performance, such as reduced contact resistance, leading to ballistic transport and enhanced carrier mobility. While a number of low-frequency noise studies exists on bare graphene devices supported on silicon dioxide gate insulators with surface contacts, such studies in heterostructure devices comprising epitaxial graphene on hexagonal boron nitride (hBN) with edge contacts are extremely limited. In this article, we present a systematic, temperature-dependent study of electrical transport and low-frequency noise in edge-contacted high-mobility HFET with a single atomic-layer graphene channel encapsulated by hBN and demonstrate ultralow noise with a Hooge parameter of ≈10–5. By combining measurements and modeling based on underlying microscopic scattering mechanisms caused by charge carriers and phonons, we directly correlate the high-performance, temperature-dependent transport behavior of this device with the noise characteristics. Our study provides a pathway towards engineering low-noise graphene-based high-performance 2D-FETs with one-dimensional edge contacts for applications such as digital electronics and chemical/biological sensing.
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Category

Academic article

Language

English

Author(s)

  • Aroop Behera
  • Charles Harris
  • Douglas Pete
  • Collin Delker
  • Per Erik Vullum
  • Marta Benthem
  • Ozhan Koybasi
  • Takashi Taniguchi
  • Kenji Watanabe
  • Branson Belle
  • Suprem Das

Affiliation

  • SINTEF Industry / Sustainable Energy Technology
  • SINTEF Industry / Materials and Nanotechnology
  • SINTEF Digital / Smart Sensors and Microsystems
  • Swiss Federal Institute of Technology of Lausanne
  • National Institute for Materials Science
  • Kansas State University
  • Sandia National Laboratories

Year

2021

Published in

ACS Applied Electronic Materials

Volume

3

Issue

9

Page(s)

4126 - 4134

View this publication at Norwegian Research Information Repository