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Direct Observation of Charge Transfer between NOx and Monolayer MoS2 by Operando Scanning Photoelectron Microscopy

Abstract

Atomically thin transition-metal dichalcogenides (MoS2, WSe2, etc.) have long been touted as promising materials for gas detection because of their tunable band gaps; however, the sensing mechanism, based on a charge-transfer process, has not been fully explored. Here, we directly observe the effect of this charge transfer on the doping levels in MoS2 upon exposure to NOx by performing scanning photoelectron microscopy (SPEM) on a monolayer MoS2 transistor under bias conditions in a gas environment. By a comparison of the operando SPEM maps of the transistor with and without exposure to NOx gas, a downward shift in the Fermi level position could be detected, consistent with NOx gas making the MoS2 channel less n-type.
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Category

Academic article

Language

English

Author(s)

  • Ingvild Julie Thue Jensen
  • Ayaz Ali
  • Patrick Zeller
  • Matteo Amati
  • Matthias Schrade
  • Per Erik Vullum
  • Marta Benthem
  • Prashant Bisht
  • Takashi Taniguchi
  • Kenji Watanabe
  • Bodh R. Mehta
  • Luca Gregoratti
  • Branson Belle

Affiliation

  • SINTEF Industry / Sustainable Energy Technology
  • SINTEF Industry / Materials and Nanotechnology
  • SINTEF Digital / Smart Sensors and Microsystems
  • Italy
  • Max Planck Society
  • Indian Institute of Technology, Delhi
  • National Institute for Materials Science

Year

2021

Published in

ACS Applied Nano Materials

Volume

4

Issue

4

Page(s)

3319 - 3324

View this publication at Norwegian Research Information Repository