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Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3

Abstract

Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.
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Category

Academic article

Language

English

Author(s)

  • Petrucio Barrozo
  • Didrik Rene Småbråten
  • Yun-Long Tang
  • Bhagwati Prasad
  • Sahar Saremi
  • Rustem Ozgur
  • Vishal Thakare
  • Rachel A. Steinhardt
  • Megan, E. Holtz
  • Vladimir Alexandru Stoica
  • Lane W. Martin
  • Darrel G. Schlom
  • Sverre Magnus Selbach
  • Ramamoorthy Ramesh

Date

12.06.2020

Year

2020

Published in

Advanced Materials

ISSN

0935-9648

Volume

32

Issue

23

View this publication at Norwegian Research Information Repository