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Improved SiC MOSFET SPICE Model to Avoid Convergence Errors

Abstract

This paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that shapes the transconductance of the device according to its
junction temperature and gate-source voltage dependency has been improved to provide a continuous characteristic rather than the initial discontinuous performance. Furthermore, the output characteristics from the initial and the proposed model have been compared to lab measurements of an actual device. The results show that the proposed and initial model provide equally reliable simulation results. However, the proposed model does not run into convergence problems.

Category

Conference lecture

Language

English

Author(s)

  • Håvard Lefdal Hove
  • Ole Christian Spro
  • Giuseppe Guidi
  • Dimosthenis Peftitsis

Affiliation

  • SINTEF Energy Research / Energisystemer
  • Norwegian University of Science and Technology

Presented at

International Conference on Silicon Carbide and Related Materials 2019

Place

Kyoto

Date

29.09.2019 - 04.10.2019

Year

2019

View this publication at Norwegian Research Information Repository